IRG4PSH71UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Bulk

Max Power Dissipation :

350W

Case Connection :

COLLECTOR

Height :

15.24mm

Max Collector Current :

99A

REACH SVHC :

No SVHC

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

380nC

Input Type :

Standard

Td (on/off) @ 25°C :

46ns/250ns

Factory Lead Time :

11 Weeks

Number of Elements :

1

Turn-Off Delay Time :

350 ns

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Current Rating :

99A

Turn On Time :

121 ns

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Reverse Recovery Time :

110 ns

Additional Feature :

ULTRA FAST SWITCHING

Published :

2004

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

1.2kV

Length :

10.5156mm

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 70A

Switching Energy :

8.8mJ (on), 9.4mJ (off)

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

2.52V

Collector Emitter Voltage (VCEO) :

2.7V

Polarity/Channel Type :

N-Channel

Power Dissipation :

350W

Element Configuration :

Single

Package / Case :

TO-274AA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Test Condition :

960V, 70A, 5 Ω, 15V

Turn Off Time-Nom (toff) :

810 ns

Rise Time :

77ns

Turn On Delay Time :

46 ns

Number of Pins :

3

Current - Collector Pulsed (Icm) :

200A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Width :

4.699mm