IRG4BC30KD-STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Transistor Application :

Motor Control

Qualification Status :

Not Qualified

Surface Mount :

yes

Number of Terminations :

2

Gate-Emitter Thr Voltage-Max :

6V

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

RoHS Status :

Non-RoHS Compliant

Voltage - Collector Emitter Breakdown (Max) :

600V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

100W

Turn Off Time-Nom (toff) :

370 ns

Turn On Time :

100 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

67nC

Td (on/off) @ 25°C :

60ns/160ns

Test Condition :

480V, 16A, 23 Ω, 15V

Additional Feature :

LOW CONDUCTION LOSS

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Pulsed (Icm) :

58A

Input Type :

Standard

Terminal Position :

Single

Switching Energy :

600μJ (on), 580μJ (off)

Fall Time-Max (tf) :

120ns

Current - Collector (Ic) (Max) :

28A

JESD-609 Code :

e3

Reverse Recovery Time :

42ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Power - Max :

100W

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Published :

2000