IRFZ46ZPBF
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- Mfr.Part #
- IRFZ46ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 51A TO220AB
- Stock
- 48,985
- In Stock ：
- 48,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 39 ns
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Current Rating :
- 51A
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 55V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 200A
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Length :
- 10.6426mm
- Resistance :
- 13.6mOhm
- FET Type :
- N-Channel
- Published :
- 2003
- Lead Free :
- Lead Free
- Width :
- 4.82mm
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Rise Time :
- 63ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 37 ns
- Rds On (Max) @ Id, Vgs :
- 13.6m Ω @ 31A, 10V
- Series :
- HEXFET®
- Dual Supply Voltage :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 82W Tc
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Mount :
- Through Hole
- Power Dissipation :
- 82W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Radiation Hardening :
- No
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Turn On Delay Time :
- 13 ns
- Height :
- 9.017mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1460pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Voltage - Rated DC :
- 55V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 51A
- Nominal Vgs :
- 4 V
- Datasheets
- IRFZ46ZPBF
N-Channel Tube 13.6m Ω @ 31A, 10V ±20V 1460pF @ 25V 46nC @ 10V TO-220-3
IRFZ46ZPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 97 mJ.A device's maximum input capacitance is 1460pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 51A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 37 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFZ46ZPBF Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 200A.
IRFZ46ZPBF Applications
There are a lot of Infineon Technologies
IRFZ46ZPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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