IRFU6215PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

110W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Pulsed Drain Current-Max (IDM) :

44A

Continuous Drain Current (ID) :

-13A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Turn On Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

150V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead, Lead Free

Number of Pins :

3

Drain to Source Breakdown Voltage :

-150V

Height :

6.22mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Length :

6.7056mm

Radiation Hardening :

No

Mount :

Through Hole

Number of Terminations :

3

Published :

2004

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Rise Time :

36ns

JESD-609 Code :

e3

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Resistance :

580mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

12 Weeks

Current Rating :

-13A

Power Dissipation :

110W

Number of Elements :

1

Fall Time (Typ) :

37 ns

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

53 ns

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Element Configuration :

Single

Voltage - Rated DC :

-150V

Packaging :

Tube

Threshold Voltage :

-4V

Dual Supply Voltage :

-150V

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED

Width :

2.3876mm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Nominal Vgs :

-4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier