IRFU3710ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Dual Supply Voltage :

100V

Mounting Type :

Through Hole

Packaging :

Tube

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

140W Tc

Rise Time :

43ns

Continuous Drain Current (ID) :

42A

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Lead Pitch :

2.28mm

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

150 mJ

Transistor Application :

SWITCHING

Resistance :

18mOhm

Transistor Element Material :

SILICON

Power Dissipation :

140W

Termination :

Through Hole

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

56A

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Lead Free :

Lead Free

Lead Length :

9.65mm

Current Rating :

42A

Input Capacitance (Ciss) (Max) @ Vds :

2930pF @ 25V

Pulsed Drain Current-Max (IDM) :

220A

Number of Pins :

3

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Threshold Voltage :

4V

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Recovery Time :

53 ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 33A, 10V

Turn-Off Delay Time :

53 ns

Length :

6.6mm

Published :

2004

ECCN Code :

EAR99

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

42 ns

Time@Peak Reflow Temperature-Max (s) :

30

Height :

6.1mm

Width :

2.3mm