IRFU120PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

18 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

7.7A

Turn On Delay Time :

6.8 ns

Pin Count :

3

Pbfree Code :

yes

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Resistance :

270mOhm

Width :

2.39mm

Vgs (Max) :

±20V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Height :

6.22mm

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Published :

2013

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

270m Ω @ 4.6A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Element Configuration :

Single

Number of Pins :

3

Fall Time (Typ) :

17 ns

Rise Time :

27ns

Radiation Hardening :

No

Number of Elements :

1

Weight :

329.988449mg

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Power Dissipation-Max :

2.5W Ta 42W Tc

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Mount :

Through Hole

Length :

6.73mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V