IRFSL4310ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

250W

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Pins :

3

Turn-Off Delay Time :

55 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

REACH SVHC :

No SVHC

Rise Time :

60ns

JESD-609 Code :

e3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

560A

Number of Terminations :

3

Packaging :

Tube

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 150μA

Height :

9.65mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Factory Lead Time :

15 Weeks

Width :

4.826mm

Drain-source On Resistance-Max :

0.006Ohm

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Continuous Drain Current (ID) :

120A

Published :

2012

Terminal Position :

Single

Mount :

Through Hole

Length :

10.668mm

Power Dissipation-Max :

250W Tc

Fall Time (Typ) :

57 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

20 ns

FET Type :

N-Channel

Nominal Vgs :

4 V