IRFS9N60ATRL
- Mfr.Part #
- IRFS9N60ATRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9.2A D2PAK
- Stock
- 21,637
- In Stock :
- 21,637
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2016
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- Supplier Device Package :
- D2PAK
- Length :
- 10.67mm
- Power Dissipation-Max :
- 170W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 750 mΩ
- Turn On Delay Time :
- 13 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 22 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Continuous Drain Current (ID) :
- 9.2A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 750mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.65mm
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 750mOhm @ 5.5A, 10V
- Input Capacitance :
- 1.4nF
- Mount :
- Surface Mount
- Weight :
- 1.437803g
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 30 ns
- Rise Time :
- 25ns
- Number of Channels :
- 1
- Height :
- 4.83mm
- Vgs (Max) :
- ±30V
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFS9N60ATRL
N-Channel Tape & Reel (TR) 750mOhm @ 5.5A, 10V ±30V 1400pF @ 25V 49nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS9N60ATRL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 25V.This device conducts a continuous drain current (ID) of 9.2A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 750mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFS9N60ATRL Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 750mOhm
a 600V drain to source voltage (Vdss)
IRFS9N60ATRL Applications
There are a lot of Vishay Siliconix
IRFS9N60ATRL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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