IRFS5620TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Element Configuration :

Single

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

24A

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

14.6ns

Power Dissipation :

144W

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

9.9 ns

Rds On Max :

77.5 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Supplier Device Package :

D2PAK

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Turn-Off Delay Time :

17.1 ns

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Drain to Source Resistance :

77.5mOhm

Rds On (Max) @ Id, Vgs :

77.5mOhm @ 15A, 10V

Number of Pins :

3

Power Dissipation-Max :

144W Tc

Turn On Delay Time :

8.6 ns

Input Capacitance :

1.71nF