IRFS52N15DTRRP
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- Mfr.Part #
- IRFS52N15DTRRP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 51A D2PAK
- Stock
- 15,286
- In Stock ：
- 15,286
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Series :
- HEXFET®
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2770pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- Power Dissipation :
- 3.8W
- Drain to Source Breakdown Voltage :
- 150V
- Turn-Off Delay Time :
- 28 ns
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 51A Tc
- Fall Time (Typ) :
- 25 ns
- Published :
- 2010
- Height :
- 4.826mm
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 3.8W Ta 230W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 36A, 10V
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Length :
- 10.668mm
- Continuous Drain Current (ID) :
- 51A
- Rise Time :
- 47ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 16 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFS52N15DTRRP
N-Channel Tape & Reel (TR) 32m Ω @ 36A, 10V ±30V 2770pF @ 25V 89nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS52N15DTRRP Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2770pF @ 25V.This device conducts a continuous drain current (ID) of 51A, which is the maximum continuous current transistor can conduct.Using VGS=150V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 150V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFS52N15DTRRP Features
a continuous drain current (ID) of 51A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 28 ns
IRFS52N15DTRRP Applications
There are a lot of Infineon Technologies
IRFS52N15DTRRP applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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