IRFS3107TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Height :

4.826mm

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

195A

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

900A

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Turn On Delay Time :

19 ns

Drain to Source Breakdown Voltage :

75V

Terminal Position :

Single

Fall Time (Typ) :

100 ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

99 ns

Rise Time :

110ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Width :

9.65mm

Series :

HEXFET®

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

370W

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Elements :

1

JESD-609 Code :

e3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Resistance :

3mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

Radiation Hardening :

No

Power Dissipation-Max :

370W Tc

Time@Peak Reflow Temperature-Max (s) :

30