IRFS3004-7PPBF
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- Mfr.Part #
- IRFS3004-7PPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 240A D2PAK
- Stock
- 1,320
- In Stock ：
- 1,320
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 240A
- Turn On Delay Time :
- 23 ns
- Number of Elements :
- 1
- Published :
- 2009
- Height :
- 4.572mm
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 40V
- Turn-Off Delay Time :
- 91 ns
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G6
- Continuous Drain Current (ID) :
- 400A
- Number of Pins :
- 7
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 4V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 1.25m Ω @ 195A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Rise Time :
- 240ns
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 380W Tc
- Mount :
- Surface Mount
- Length :
- 10.668mm
- Fall Time (Typ) :
- 160 ns
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 9130pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Resistance :
- 1.25mOhm
- Power Dissipation :
- 380W
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Width :
- 9.65mm
- Datasheets
- IRFS3004-7PPBF
N-Channel Tube 1.25m Ω @ 195A, 10V ±20V 9130pF @ 25V 240nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRFS3004-7PPBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9130pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 400A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 240A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 91 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 23 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFS3004-7PPBF Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 400A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 91 ns
a threshold voltage of 4V
IRFS3004-7PPBF Applications
There are a lot of Infineon Technologies
IRFS3004-7PPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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