IRFR3709Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

340A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

100 mJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 15V

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

79W Tc

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

JESD-609 Code :

e0

Series :

HEXFET®

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245