IRFL4105TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

12 ns

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead, Lead Free

Power Dissipation :

2.1W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Number of Pins :

3

Length :

6.6802mm

Terminal Position :

Dual

Mount :

Surface Mount

Turn On Delay Time :

7.1 ns

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.7A, 10V

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G4

Recovery Time :

82 ns

Number of Terminations :

4

Drain to Source Breakdown Voltage :

55V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Height :

1.8mm

Number of Channels :

1

Transistor Application :

SWITCHING

Voltage - Rated DC :

55V

Width :

3.7mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

±20V

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

3.7A

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Power Dissipation-Max :

1W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

55V

Current Rating :

3.7A

Threshold Voltage :

4V

Package / Case :

TO-261-4, TO-261AA

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Resistance :

45mOhm

Published :

1999

REACH SVHC :

No SVHC