IRFI4410ZGPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

23 ns

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Mount :

Through Hole

Continuous Drain Current (ID) :

43A

Mounting Type :

Through Hole

Power Dissipation-Max :

47W Tc

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 150μA

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

9.3mOhm @ 26A, 10V

Supplier Device Package :

TO-220AB Full-Pak

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

4910pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

100V

Rds On Max :

9.3 mΩ

Turn-Off Delay Time :

27 ns

Min Operating Temperature :

-55°C

Series :

HEXFET®

Rise Time :

15ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

47W

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Packaging :

Tube

Fall Time (Typ) :

43 ns

Radiation Hardening :

No

Input Capacitance :

4.91nF

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Vgs (Max) :

±30V