IRFH5250TR2PBF
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- Mfr.Part #
- IRFH5250TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 45A PQFN
- Stock
- 48,193
- In Stock ：
- 48,193
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5.9944mm
- Max Power Dissipation :
- 3.6W
- Package / Case :
- 8-PowerVDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Dual Supply Voltage :
- 25V
- Height :
- 838.2μm
- Threshold Voltage :
- 1.8V
- Drain to Source Breakdown Voltage :
- 25V
- Width :
- 5mm
- Input Capacitance :
- 2.93nF
- Rise Time :
- 46ns
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 28 ns
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3.6W
- Turn-Off Delay Time :
- 30 ns
- Continuous Drain Current (ID) :
- 100A
- Nominal Vgs :
- 1.8 V
- Vgs(th) (Max) @ Id :
- 2.35V @ 150μA
- Drain to Source Voltage (Vdss) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 1.15mOhm @ 50A, 10V
- Packaging :
- Digi-Reel®
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- 8-PQFN (5x6)
- Rds On Max :
- 1.15 mΩ
- Recovery Time :
- 41 ns
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta 100A Tc
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 1.75MOhm
- Fall Time (Typ) :
- 19 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7174pF @ 13V
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Datasheets
- IRFH5250TR2PBF
N-Channel Digi-Reel® 1.15mOhm @ 50A, 10V 7174pF @ 13V 110nC @ 10V 25V 8-PowerVDFN
IRFH5250TR2PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7174pF @ 13V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Using VGS=25V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 25V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.75mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.8V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 25V.
IRFH5250TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.75mOhm
a threshold voltage of 1.8V
a 25V drain to source voltage (Vdss)
IRFH5250TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5250TR2PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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