IRFH5215TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.6W Ta 104W Tc

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

96 mJ

Power Dissipation :

104W

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

5 V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Fall Time (Typ) :

2.9 ns

Number of Pins :

8

Vgs(th) (Max) @ Id :

5V @ 100µA

Terminal Position :

Dual

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5A Ta 27A Tc

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

58m Ω @ 16A, 10V

Turn-Off Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

5

Continuous Drain Current (ID) :

5A

Turn On Delay Time :

6.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Case Connection :

DRAIN

Vgs (Max) :

±20V

Series :

HEXFET®

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Rise Time :

6.3ns

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-N5

Package / Case :

8-VQFN Exposed Pad

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

150V