IRFB42N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

55m Ω @ 26A, 10V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Radiation Hardening :

No

REACH SVHC :

No SVHC

Number of Elements :

1

Length :

10.5156mm

FET Type :

N-Channel

Voltage - Rated DC :

200V

Nominal Vgs :

5.5 V

Lead Free :

Contains Lead, Lead Free

Drain to Source Breakdown Voltage :

200V

Rise Time :

69ns

Input Capacitance (Ciss) (Max) @ Vds :

3430pF @ 25V

Height :

15.24mm

Package / Case :

TO-220-3

Fall Time (Typ) :

32 ns

Number of Terminations :

3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Recovery Time :

330 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

44A

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

29 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

5.5V

Published :

2001

Current Rating :

42A

Width :

4.69mm

Dual Supply Voltage :

200V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Resistance :

55Ohm

Case Connection :

DRAIN

Turn On Delay Time :

18 ns

Drain Current-Max (Abs) (ID) :

42.6A

Number of Pins :

3

Vgs (Max) :

±30V

Series :

HEXFET®

Power Dissipation :

300W

Power Dissipation-Max :

2.4W Ta 330W Tc