IRF9952PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Packaging :

Tube

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Current Rating :

3.5A

Continuous Drain Current (ID) :

3.5A

Pulsed Drain Current-Max (IDM) :

16A

Number of Pins :

8

REACH SVHC :

No SVHC

Nominal Vgs :

1 V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Threshold Voltage :

1V

Resistance :

100MOhm

Width :

4.05mm

RoHS Status :

ROHS3 Compliant

Length :

4.9784mm

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Fall Time (Typ) :

6.9 ns

Mount :

Surface Mount

FET Type :

N and P-Channel

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Published :

2004

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Avalanche Energy Rating (Eas) :

44 mJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Series :

HEXFET®

Rise Time :

14ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Base Part Number :

IRF9952PBF

Row Spacing :

6.3 mm

Number of Elements :

2

ECCN Code :

EAR99

Height :

1.4986mm