IRF7805QTRPBF

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Mfr.Part #
IRF7805QTRPBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 13A 8-SOIC
Stock
47,093
In Stock :
47,093

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HEXFET®
RoHS Status :
RoHS Compliant
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Length :
4.9784mm
Packaging :
Cut Tape (CT)
Mounting Type :
Surface Mount
Number of Pins :
8
Fall Time (Typ) :
16 ns
Radiation Hardening :
No
Configuration :
Single
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
3.9878mm
Power Dissipation :
2.5W
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
11m Ω @ 7A, 4.5V
Continuous Drain Current (ID) :
13A
Published :
2014
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 5V
Turn-Off Delay Time :
38 ns
Gate to Source Voltage (Vgs) :
12V
FET Type :
N-Channel
Max Power Dissipation :
2.5W
Drain to Source Breakdown Voltage :
30V
Min Operating Temperature :
-55°C
Turn On Delay Time :
16 ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rise Time :
20ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Height :
1.4986mm
Datasheets
IRF7805QTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7805QTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), IRF7805QTRPBF pinout, IRF7805QTRPBF datasheet PDF, IRF7805QTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7805QTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7805QTRPBF


N-Channel Cut Tape (CT) 11m Ω @ 7A, 4.5V 31nC @ 5V 8-SOIC (0.154, 3.90mm Width)

IRF7805QTRPBF Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.

IRF7805QTRPBF Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns


IRF7805QTRPBF Applications


There are a lot of Infineon Technologies
IRF7805QTRPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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