IRF6715MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Supplier Device Package :

DIRECTFET™ MX

Power Dissipation :

2.8W

Width :

5.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C

Drain to Source Resistance :

2.7MOhm

Length :

5.45mm

Input Capacitance :

5.34nF

Package / Case :

DirectFET™ Isometric MX

Input Capacitance (Ciss) (Max) @ Vds :

5340pF @ 13V

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Nominal Vgs :

1.9 V

Threshold Voltage :

1.9V

Rds On (Max) @ Id, Vgs :

1.6mOhm @ 34A, 10V

Recovery Time :

42 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On Max :

1.6 mΩ

Turn On Delay Time :

20 ns

Drain to Source Breakdown Voltage :

25V

Published :

2007

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

25V

Element Configuration :

Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.8W Ta 78W Tc

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Mount :

Surface Mount

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Number of Pins :

7

Fall Time (Typ) :

12 ns

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

34A Ta 180A Tc

Dual Supply Voltage :

25V

Rise Time :

31ns

Turn-Off Delay Time :

16 ns

Continuous Drain Current (ID) :

34A

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Height :

508μm