IRF4905LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

280A

Fall Time (Typ) :

64 ns

ECCN Code :

EAR99

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Height :

9.652mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rise Time :

99ns

Continuous Drain Current (ID) :

-74A

Number of Terminations :

3

Current Rating :

-74A

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Radiation Hardening :

No

Length :

10.668mm

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tube

Width :

4.826mm

Mounting Type :

Through Hole

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

20 ns

Drain Current-Max (Abs) (ID) :

42A

Drain-source On Resistance-Max :

0.02Ohm

Nominal Vgs :

4 V

Voltage - Rated DC :

-55V

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Power Dissipation :

200W

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Case Connection :

DRAIN

Dual Supply Voltage :

55V

Drain to Source Breakdown Voltage :

-55V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

170W Tc

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Turn-Off Delay Time :

51 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA