IRF3805L-7PPBF
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- Mfr.Part #
- IRF3805L-7PPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 160A D2PAK
- Stock
- 22,118
- In Stock ：
- 22,118
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 300W
- Turn-Off Delay Time :
- 80 ns
- Vgs (Max) :
- ±20V
- Published :
- 2013
- Fall Time (Typ) :
- 52 ns
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Length :
- 10.668mm
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7820pF @ 25V
- Turn On Delay Time :
- 23 ns
- Width :
- 4.826mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 140A, 10V
- Mount :
- Surface Mount, Through Hole
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 7
- Power Dissipation-Max :
- 300W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Series :
- HEXFET®
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 160A
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 9.65mm
- Rise Time :
- 130ns
- Drain to Source Breakdown Voltage :
- 55V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Datasheets
- IRF3805L-7PPBF
N-Channel Tube 2.6m Ω @ 140A, 10V ±20V 7820pF @ 25V 200nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRF3805L-7PPBF Overview
A device's maximum input capacitance is 7820pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 160A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF3805L-7PPBF Features
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 80 ns
IRF3805L-7PPBF Applications
There are a lot of Infineon Technologies
IRF3805L-7PPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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