IRF3709ZCSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

350A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0063Ohm

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.25V @ 250μA

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

79W Tc

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 21A, 10V

FET Type :

N-Channel

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

60 mJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

87A Tc

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

42A

Terminal Position :

Single

Transistor Application :

SWITCHING

JESD-609 Code :

e3