IRF3709PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Current Rating :

90A

Case Connection :

DRAIN

Continuous Drain Current (ID) :

90A

Radiation Hardening :

No

Number of Pins :

3

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Voltage - Rated DC :

30V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

FET Type :

N-Channel

Package / Case :

TO-220-3

Height :

8.763mm

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Power Dissipation :

120W

Power Dissipation-Max :

3.1W Ta 120W Tc

Nominal Vgs :

3 V

Length :

10.5156mm

Fall Time (Typ) :

9.2 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Published :

2001

ECCN Code :

EAR99

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Turn-Off Delay Time :

21 ns

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rise Time :

171ns

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Resistance :

9Ohm

Turn On Delay Time :

11 ns

Width :

4.69mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Element Configuration :

Single