IRF3707ZCLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

9.5 mΩ

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

TO-262

Power Dissipation-Max :

57W Tc

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 21A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Current Rating :

59A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Power Dissipation :

57W

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

12.5mOhm

Rise Time :

41ns

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Series :

HEXFET®

Published :

2008

Continuous Drain Current (ID) :

59A

Max Operating Temperature :

175°C

FET Type :

N-Channel

Input Capacitance :

1.21nF