IRF1010EZSTRLP
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- Mfr.Part #
- IRF1010EZSTRLP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 1,659
- In Stock ：
- 1,659
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2810pF @ 25V
- Turn On Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Series :
- HEXFET®
- Published :
- 2002
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 38 ns
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation :
- 140W
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Rise Time :
- 90ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Resistance :
- 8.5mOhm
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Fall Time (Typ) :
- 54 ns
- Number of Pins :
- 3
- Power Dissipation-Max :
- 140W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 51A, 10V
- Datasheets
- IRF1010EZSTRLP
N-Channel Tape & Reel (TR) 8.5m Ω @ 51A, 10V ±20V 2810pF @ 25V 86nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010EZSTRLP Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2810pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF1010EZSTRLP Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38 ns
IRF1010EZSTRLP Applications
There are a lot of Infineon Technologies
IRF1010EZSTRLP applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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