IPW65R099C6FKSA1
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- Mfr.Part #
- IPW65R099C6FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 38A TO247-3
- Stock
- 2,879
- In Stock ：
- 2,879
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 38A
- Power Dissipation-Max :
- 278W Tc
- Max Dual Supply Voltage :
- 650V
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 6 ns
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2780pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 12.8A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 10.6 ns
- Packaging :
- Tube
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 77 ns
- Factory Lead Time :
- 12 Weeks
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 127nC @ 10V
- Rise Time :
- 9ns
- Power Dissipation :
- 278W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.2mA
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2008
- Series :
- CoolMOS™
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.099Ohm
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPW65R099C6FKSA1
N-Channel Tube 99m Ω @ 12.8A, 10V ±20V 2780pF @ 100V 127nC @ 10V TO-247-3
IPW65R099C6FKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 845 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2780pF @ 100V.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 77 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPW65R099C6FKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 38A
the turn-off delay time is 77 ns
IPW65R099C6FKSA1 Applications
There are a lot of Infineon Technologies
IPW65R099C6FKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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