IPW60R060P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 800μA

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Position :

Single

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

164W

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Continuous Drain Current (ID) :

48A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

164W Tc

Height :

25.4mm

Drain-source On Resistance-Max :

0.06Ohm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Package / Case :

TO-247-3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2014

Turn On Delay Time :

23 ns

Series :

CoolMOS™ P7

Case Connection :

DRAIN

Turn-Off Delay Time :

79 ns