IPS50R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

66W Tc

Qualification Status :

Not Qualified

Package / Case :

TO-251-3 Stub Leads, IPak

Continuous Drain Current (ID) :

7.1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

550V

Mounting Type :

Through Hole

Number of Elements :

1

Pin Count :

3

Series :

CoolMOS™

FET Type :

N-Channel

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation :

66W

Drain-source On Resistance-Max :

0.52Ohm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Mount :

Through Hole

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Turn-Off Delay Time :

80 ns

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

Nominal Vgs :

3 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

RoHS Compliant

Published :

2007

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Max Dual Supply Voltage :

500V

Vgs (Max) :

±20V

Element Configuration :

Single

Turn On Delay Time :

35 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

14ns

Gate to Source Voltage (Vgs) :

20V