IPP65R280C6XKSA1
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- Mfr.Part #
- IPP65R280C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13.8A TO220-3
- Stock
- 96,790
- In Stock ：
- 96,790
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 11ns
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 13.8A
- Fall Time (Typ) :
- 12 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 39A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 105 ns
- Factory Lead Time :
- 12 Weeks
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 104W Tc
- Drain-source On Resistance-Max :
- 0.28Ohm
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.4A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Turn On Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Series :
- CoolMOS™
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Power Dissipation :
- 104W
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 650V
- Datasheets
- IPP65R280C6XKSA1
N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-220-3
IPP65R280C6XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 950pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 105 ns.Its maximum pulsed drain current is 39A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP65R280C6XKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 105 ns
based on its rated peak drain current 39A.
IPP65R280C6XKSA1 Applications
There are a lot of Infineon Technologies
IPP65R280C6XKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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