IPP032N06N3GHKSA1
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- Mfr.Part #
- IPP032N06N3GHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A TO220-3
- Stock
- 15,393
- In Stock ：
- 15,393
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Power Dissipation-Max :
- 188W Tc
- Continuous Drain Current (ID) :
- 120A
- Power Dissipation :
- 188W
- Mount :
- Through Hole
- Rds On Max :
- 3.2 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 13000pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 175°C
- Series :
- OptiMOS™
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 3.2mOhm @ 100A, 10V
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 62 ns
- Fall Time (Typ) :
- 20 ns
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 35 ns
- Rise Time :
- 120ns
- Input Capacitance :
- 13nF
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 118µA
- Supplier Device Package :
- PG-TO220-3
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Datasheets
- IPP032N06N3GHKSA1
N-Channel Tube 3.2mOhm @ 100A, 10V ±20V 13000pF @ 30V 165nC @ 10V 60V TO-220-3
IPP032N06N3GHKSA1 Overview
A device's maximum input capacitance is 13000pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP032N06N3GHKSA1 Features
a continuous drain current (ID) of 120A
the turn-off delay time is 62 ns
a 60V drain to source voltage (Vdss)
IPP032N06N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP032N06N3GHKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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