IPP024N06N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

79 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0024Ohm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

41 ns

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Series :

OptiMOS™

Package / Case :

TO-220-3

Pin Count :

3

Width :

4.4mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Mount :

Through Hole

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

13 Weeks

Pbfree Code :

yes

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 196µA

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 30V

Halogen Free :

Halogen Free

Published :

2008

Pulsed Drain Current-Max (IDM) :

480A

Height :

15.65mm

Max Dual Supply Voltage :

60V

Continuous Drain Current (ID) :

120A

Gate to Source Voltage (Vgs) :

20V

Length :

10mm

Packaging :

Tube

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING