IPL65R070C7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation-Max :

169W Tc

Vgs(th) (Max) @ Id :

4V @ 850μA

Vgs (Max) :

±20V

Turn On Delay Time :

14 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.07Ohm

Max Dual Supply Voltage :

650V

Terminal Finish :

Tin (Sn)

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Mount :

Surface Mount

Package / Case :

4-PowerTSFN

Number of Elements :

1

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

3020pF @ 100V

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

2A (4 Weeks)

Terminal Position :

Single

Number of Pins :

4

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

171 mJ

Operating Temperature :

-40°C~150°C TJ

Continuous Drain Current (ID) :

28A

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™ C7

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

70m Ω @ 8.5A, 10V

Turn-Off Delay Time :

92 ns

Fall Time (Typ) :

11 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Rise Time :

6ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V