IPI200N25N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

256A

Fall Time (Typ) :

12 ns

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 270μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Published :

2011

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7100pF @ 100V

Pbfree Code :

No

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Series :

OptiMOS™

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

64A

Rise Time :

20ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

45 ns

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

20m Ω @ 64A, 10V

Max Dual Supply Voltage :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.02Ohm

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Number of Elements :

1

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Mount :

Through Hole

Turn On Delay Time :

18 ns

Number of Pins :

3