IPI120N04S302AKSA1
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- Mfr.Part #
- IPI120N04S302AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO262-3
- Stock
- 4,960
- In Stock ：
- 4,960
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 230μA
- Additional Feature :
- ULTRA LOW RESISTANCE
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Number of Terminations :
- 3
- Packaging :
- Tube
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1880 mJ
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 480A
- Max Dual Supply Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 80A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Input Capacitance (Ciss) (Max) @ Vds :
- 14300pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Series :
- OptiMOS™
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 300W Tc
- Continuous Drain Current (ID) :
- 120A
- Number of Elements :
- 1
- Terminal Position :
- Single
- Datasheets
- IPI120N04S302AKSA1
N-Channel Tube 2.3m Ω @ 80A, 10V ±20V 14300pF @ 25V 210nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120N04S302AKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1880 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Powered by 40V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPI120N04S302AKSA1 Features
the avalanche energy rating (Eas) is 1880 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 480A.
IPI120N04S302AKSA1 Applications
There are a lot of Infineon Technologies
IPI120N04S302AKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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