IPD170N04NGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

2.2 ns

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 20V

Terminal Form :

Gull wing

Number of Terminations :

2

Number of Pins :

3

Pin Count :

4

Rds On (Max) @ Id, Vgs :

17m Ω @ 30A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

31W Tc

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

210A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 10μA

ECCN Code :

EAR99

Number of Elements :

1

Published :

2007

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

7 ns

Rise Time :

1ns

Mount :

Surface Mount

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

30A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

5 mJ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

40V

Turn On Delay Time :

5.7 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.017Ohm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pbfree Code :

No