IPB120N04S404ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Published :

2013

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 100A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

2

Halogen Free :

Halogen Free

Avalanche Energy Rating (Eas) :

75 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

480A

Vgs (Max) :

±20V

Max Dual Supply Voltage :

40V

ECCN Code :

EAR99

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 40μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

79W Tc

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

120A

Drain-source On Resistance-Max :

0.0036Ohm

Lead Free :

Contains Lead

Case Connection :

DRAIN

Mount :

Surface Mount

Pbfree Code :

yes

Number of Elements :

1