IPB017N10N5LFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 50V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.5mm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.1V @ 270μA

JESD-30 Code :

R-PSSO-G6

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

128 ns

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

13 Weeks

Turn On Delay Time :

7 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Case Connection :

DRAIN

Continuous Drain Current (ID) :

31A

Avalanche Energy Rating (Eas) :

979 mJ

Transistor Element Material :

SILICON

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™-5

Power Dissipation :

313W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Power Dissipation-Max :

313W Tc

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

720A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Channels :

1