IPA65R600C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.6Ohm

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Published :

2008

FET Type :

N-Channel

Terminal Position :

Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

650V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

142 mJ

Power Dissipation-Max :

28W Tc

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

18A

Reach Compliance Code :

Compliant

Pin Count :

3

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE