IPA65R420CFDXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Power Dissipation-Max :

31.2W Tc

Drain Current-Max (Abs) (ID) :

8.7A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Published :

2008

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4.5V @ 340μA

DS Breakdown Voltage-Min :

650V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

27A

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.4A, 10V

Case Connection :

Isolated

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

227 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

650V

Drain-source On Resistance-Max :

0.42Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE