IPA60R950C6XKSA1
- Mfr.Part #
- IPA60R950C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.4A TO220-FP
- Stock
- 67,565
- In Stock :
- 67,565
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 26W Tc
- Pin Count :
- 3
- Packaging :
- Tube
- Turn-Off Delay Time :
- 60 ns
- Number of Pins :
- 3
- Rise Time :
- 8ns
- Mount :
- Through Hole
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Drain-source On Resistance-Max :
- 0.95Ohm
- Power Dissipation :
- 26W
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 130μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 100V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Series :
- CoolMOS™
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 13 ns
- Vgs (Max) :
- ±20V
- Published :
- 2005
- Max Dual Supply Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 1.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Halogen Free :
- Halogen Free
- Case Connection :
- Isolated
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Turn On Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 4.4A
- Datasheets
- IPA60R950C6XKSA1

N-Channel Tube 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V TO-220-3 Full Pack
IPA60R950C6XKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 46 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 280pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.4A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPA60R950C6XKSA1 Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.4A
the turn-off delay time is 60 ns
IPA60R950C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R950C6XKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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