IMB7AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

VCEsat-Max :

0.3 V

Terminal Form :

Gull wing

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Number of Elements :

2

Mount :

Surface Mount

Max Collector Current :

100mA

hFE Min :

100

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Published :

2004

Terminal Finish :

Tin/Copper (Sn/Cu)

Collector Emitter Voltage (VCEO) :

50V

HTS Code :

8541.21.00.95

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Package / Case :

SOT-457

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

4.7k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

6

Factory Lead Time :

7 Weeks

Element Configuration :

Dual

Mounting Type :

Surface Mount

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V