IMB1AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Number of Pins :

6

Factory Lead Time :

7 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Base Part Number :

MB1

Packaging :

Tape and Reel (TR)

hFE Min :

56

Max Collector Current :

100mA

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Resistor - Base (R1) :

22k Ω

Mount :

Surface Mount

VCEsat-Max :

0.3 V

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

Resistor - Emitter Base (R2) :

22k Ω

Pin Count :

6

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Published :

2001

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Number of Elements :

2

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity :

PNP

Package / Case :

SC-74, SOT-457

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Voltage - Rated DC :

-50V

Collector Emitter Voltage (VCEO) :

300mV

Current Rating :

-100mA

Element Configuration :

Dual