IHW15N120R2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6.4V

Max Collector Current :

30A

Number of Elements :

1

Operating Temperature :

-40°C~175°C TJ

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

1.2kV

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.8V

Max Power Dissipation :

357W

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

IGBT Type :

Trench Field Stop

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic :

1.75V @ 15V, 15A

Mounting Type :

Through Hole

Test Condition :

600V, 15A, 14.8 Ω, 15V

Current - Collector Pulsed (Icm) :

45A

Turn Off Time-Nom (toff) :

432 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

-/282ns

Packaging :

Tube

Input Type :

Standard

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Switching Energy :

900μJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Power Dissipation :

357W

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AD

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Published :

2006

Package / Case :

TO-247-3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Gate Charge :

133nC

Mount :

Through Hole

Pin Count :

3