HUFA75645P3
- Mfr.Part #
- HUFA75645P3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO220-3
- Stock
- 6,341
- In Stock :
- 6,341
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 100V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 310W Tc
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.014Ohm
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 75A
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 238nC @ 20V
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 75A, 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.79pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- UltraFET™
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Qualification Status :
- COMMERCIAL
- Pbfree Code :
- yes
- Datasheets
- HUFA75645P3

N-Channel Tube 14m Ω @ 75A, 10V ±20V 3.79pF @ 25V 238nC @ 20V 100V TO-220-3
HUFA75645P3 Overview
A device's maximal input capacitance is 3.79pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
HUFA75645P3 Features
a 100V drain to source voltage (Vdss)
HUFA75645P3 Applications
There are a lot of Rochester Electronics, LLC
HUFA75645P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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