HUF75639S3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

ECCN Code :

EAR99

Published :

2002

Power Dissipation :

200W

Number of Pins :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Case Connection :

DRAIN

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

25m Ω @ 56A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

100V

Radiation Hardening :

No

Current Rating :

56A

Pbfree Code :

yes

Weight :

1.31247g

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Series :

UltraFET™

Rise Time :

60ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Resistance :

25mOhm

Continuous Drain Current (ID) :

56A

Terminal Form :

Gull wing

Power Dissipation-Max :

200W Tc

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

15 ns

FET Type :

N-Channel

Mounting Type :

Surface Mount

Fall Time (Typ) :

25 ns

Element Configuration :

Single

Turn-Off Delay Time :

20 ns

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Lead Free :

Lead Free

Mount :

Surface Mount