HIP6603BECBZ
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- Mfr.Part #
- HIP6603BECBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 41,874
- In Stock ：
- 41,874
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Supplier Device Package :
- 8-SOIC-EP
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- ECCN Code :
- EAR99
- Max Output Current :
- 730mA
- Series :
- --
- Number of Pins :
- 8
- Published :
- 2001
- Current - Output :
- 730mA
- Max Supply Voltage :
- 13.2V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 8
- Number of Drivers :
- 2
- Fall Time (Typ) :
- 20 ns
- Temperature Grade :
- Other
- Min Operating Temperature :
- 0°C
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Logic Voltage - VIL, VIH :
- --
- Mount :
- Surface Mount
- Driven Configuration :
- Half-Bridge
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Base Part Number :
- HIP6603B
- Output Peak Current Limit-Nom :
- 0.73A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 8
- Width :
- 3.9mm
- Min Supply Voltage :
- 10.8V
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Terminal Position :
- Dual
- Gate Type :
- N-Channel MOSFET
- Input Type :
- Non-Inverting
- Voltage - Rated DC :
- 12V
- Supply Voltage :
- 12V
- Radiation Hardening :
- No
- Number of Functions :
- 1
- Rise Time :
- 50ns
- Current - Peak Output (Source, Sink) :
- --
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 85°C
- Mounting Type :
- Surface Mount
- Package / Case :
- SOIC
- High Side Voltage - Max (Bootstrap) :
- 15V
- High Side Driver :
- yes
- Channel Type :
- SYNCHRONOUS
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- JESD-609 Code :
- e3
- Datasheets
- HIP6603BECBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BECBZ Overview
The Intersil (Renesas Electronics Corporation) HIP6603BECBZ gate driver is designed for modern, high-efficiency applications, ensuring robust and reliable gate driving performance in a compact package. This half-bridge driver is optimized for driving N-channel MOSFETs and IGBTs, which makes it a pivotal component in advanced switching applications. Its integration features such as under-voltage lockout and high peak output drive current enhance system reliability and performance, particularly in demanding environments. The HIP6603BECBZ's small form factor in an 8SOIC package allows for reduced board space and improved thermal management, making it an ideal choice for scalable designs.
HIP6603BECBZ Features
The HIP6603BECBZ gate driver boasts a variety of features that enhance its efficiency and reliability:
- High peak output drive current, suitable for high-speed operation.
- Integrated under-voltage lockout for increased system safety.
- Matched propagation delay times for synchronous switching.
- Dual independent drives for flexible control configurations.
- Designed for operation with a wide range of supply voltages.
HIP6603BECBZ Applications
- DC-DC Converters: Facilitates efficient switching in power conversion circuits, optimizing performance and enhancing power density.
- Motor Control Systems: Drives MOSFETs or IGBTs in electric vehicle motor controllers, contributing to precise and efficient motor management.
- Solar Inverters: Plays a crucial role in managing power switches for converting DC from solar panels to AC, ensuring reliable and stable solar energy conversion.
- UPS Systems: Ensures high reliability and efficiency in uninterruptible power supplies, essential for critical power backup solutions.
- Welding Equipment: Supports robust and precise control in industrial welding machines, enhancing the quality and consistency of welds.
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