HIP6603BECB
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- Mfr.Part #
- HIP6603BECB
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 7,135
- In Stock ：
- 7,135
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Input Type :
- Non-Inverting
- Width :
- 3.9mm
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Channel Type :
- SYNCHRONOUS
- Supply Voltage1-Min :
- 5V
- Supply Voltage-Min (Vsup) :
- 10.8V
- Supplier Device Package :
- 8-SOIC-EP
- Min Operating Temperature :
- 0°C
- Current - Output :
- 2.5A
- Max Operating Temperature :
- 85°C
- Logic Voltage - VIL, VIH :
- --
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e0
- High Side Voltage - Max (Bootstrap) :
- 15V
- Number of Drivers :
- 2
- Output Peak Current Limit-Nom :
- 0.73A
- High Side Driver :
- yes
- Current - Peak Output (Source, Sink) :
- --
- Number of Functions :
- 1
- Height Seated (Max) :
- 1.68mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Mount :
- Surface Mount
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Base Part Number :
- HIP6603B
- Driven Configuration :
- Half-Bridge
- Temperature Grade :
- Other
- JESD-30 Code :
- R-PDSO-G8
- Series :
- --
- Number of Outputs :
- 2
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Supply Voltage :
- 12V
- Voltage - Rated DC :
- 12V
- Length :
- 4.89mm
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Gate Type :
- N-Channel MOSFET
- Datasheets
- HIP6603BECB
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BECB Overview
The HIP6603BECB from Intersil (Renesas Electronics Corporation) is a high-performance, half-bridge gate driver designed to efficiently control MOSFETs in a variety of applications. This integrated circuit is housed in a compact 8SOIC package, making it ideal for space-constrained environments where high power density is required. With its robust design and advanced technology, the HIP6603BECB enhances system reliability and performance by providing precise gate drive voltage and timing. This makes the Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BECB an essential component for developers looking to optimize their power management solutions.
HIP6603BECB Features
The HIP6603BECB gate driver includes several key features that make it stand out in the electronics market. It offers a dual input for flexible control along with independent high-side and low-side driver channels. The IC supports up to 2A output drive capability, ensuring robust driving of the connected MOSFETs. Additionally, it features under-voltage lockout protection and a bootstrap diode for higher efficiency and operational reliability.
HIP6603BECB Applications
- Switch Mode Power Supplies (SMPS): Enables efficient switching of MOSFETs to maintain stable output voltages and currents in various power supply designs.
- Motor Control Systems: Utilized to control high-speed motors by providing the necessary drive signals to MOSFETs, ensuring precise speed and torque management.
- DC-DC Converters: Helps in stepping down or stepping up voltages in DC-DC conversion systems with improved efficiency and power handling.
- Renewable Energy Systems: Essential in solar inverters and wind turbine converters, driving MOSFETs that handle high power levels necessary for energy conversion.
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