HIP6603BCBZ
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- Mfr.Part #
- HIP6603BCBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 2,298
- In Stock ：
- 2,298
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Lead Free :
- Lead Free
- Max Output Current :
- 730mA
- Input Type :
- Non-Inverting
- Temperature Grade :
- Other
- Number of Terminations :
- 8
- RoHS Status :
- RoHS Compliant
- Width :
- 3.9mm
- Package / Case :
- SOIC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Functions :
- 1
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Published :
- 2001
- Min Supply Voltage :
- 10.8V
- Length :
- 4.9mm
- High Side Voltage - Max (Bootstrap) :
- 15V
- Height Seated (Max) :
- 1.75mm
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Current - Peak Output (Source, Sink) :
- --
- Mounting Type :
- Surface Mount
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- High Side Driver :
- yes
- Fall Time (Typ) :
- 20 ns
- Factory Lead Time :
- 7 Weeks
- Channel Type :
- SYNCHRONOUS
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Logic Voltage - VIL, VIH :
- --
- Voltage - Rated DC :
- 12V
- Supply Voltage :
- 12V
- Output Peak Current Limit-Nom :
- 0.73A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 8
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Min Operating Temperature :
- 0°C
- Base Part Number :
- HIP6603B
- Driven Configuration :
- Half-Bridge
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Max Operating Temperature :
- 85°C
- JESD-609 Code :
- e3
- Series :
- --
- Number of Drivers :
- 2
- Gate Type :
- N-Channel MOSFET
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Terminal Position :
- Dual
- Max Supply Voltage :
- 13.2V
- Supplier Device Package :
- 8-SOIC
- Current - Output :
- 730mA
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 50ns
- Datasheets
- HIP6603BCBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BCBZ Overview
The HIP6603BCBZ from Intersil (Renesas Electronics Corporation) is a highly efficient, robust gate driver designed for demanding half-bridge configurations. As a crucial component in advanced power management systems, this IC facilitates precise control over gate switching functionalities, optimizing performance across various applications. Its integration into systems aims to enhance efficiency, reliability, and the overall longevity of the power handling capabilities. The specialized design of the HIP6603BCBZ makes it an ideal choice for developers looking to harness the benefits of superior gate drive performance in a compact 8SOIC package.
HIP6603BCBZ Features
This gate driver IC comes equipped with numerous features that ensure optimal performance and ease of use in power management systems. It offers a robust voltage range and high drive strength, which enhances the IC's capability to handle high-speed switching with minimal delay and power loss. The built-in protection mechanisms against under-voltage and thermal overload further bolster the reliability and safety of applications, making the HIP6603BCBZ a dependable choice for critical systems.
HIP6603BCBZ Applications
- Motor Control Systems: The HIP6603BCBZ is utilized to drive the gates of MOSFETs and IGBTs in motor controllers, enabling efficient speed and torque management.
- Power Supplies: This IC optimizes switching transients in power supply units, reducing noise and improving power efficiency.
- Renewable Energy Systems: In solar inverters and wind turbine converters, the HIP6603BCBZ ensures reliable gate driving for effective energy conversion.
- Electric Vehicles: Applied in the drive systems of electric vehicles, it helps in managing power distribution efficiently to enhance vehicle performance and battery longevity.
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